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v23990-p823-f10-pm preliminary datasheet flowpack 1 3rd gen 600v/50a compact flow1 housing compact and low inductance design built-in ntc motor drive power generation ups v23990-p823-f10 tj=25c, unless otherwise specified parameter symbol value unit inverter transistor t h =80c 44 t c =80c t h =80c 150 t c =80c t h =80c 77 t c =80c t sc t j 150c 6 s v cc v ge =15v 360 v inverter diode t h =80c 40 t c =80c t h =80c 100 t c =80c t h =80c 57 t c =80c thermal properties 175 maximum junction temperature c 600 20 w a collector-emitter break down voltage repetitive peak collector current dc collector current v ce i cpulse i c 175 v 600 i frm t j max repetitive peak forward current features flow1 housing target applications schematic types maximum ratings condition a v c v v rrm maximum junction temperature power dissipation per igbt v ge t j max p tot short circuit ratings peak repetitive reverse voltage gate-emitter peak voltage t j =t j max t j =25c t j =t j max t j =t j max t p limited by t j max w power dissipation per diode p tot dc forward current a t j =t j max t p limited by t j max a i f -40?+150 c storage temperature t stg -40?+125 c t op operation temperature under switching condition copyright by vincotech 1 revision: 2
v23990-p823-f10-pm preliminary datasheet tj=25c, unless otherwise specified parameter symbol value unit maximum ratings condition insulation properties v is t=1min 4000 v dc min 12,7 mm min 12,7 mm clearance insulation voltage creepage distance copyright by vincotech 2 revision: 2
v23990-p823-f10-pm preliminary datasheet parameter symbol unit v ge [v] or v gs [v] v r [v] or v ce [v] or v ds [v] i c [a] or i f [a] or i d [a] t j min typ max tj=25c 5 5,8 6,5 tj=150c tj=25c 1,1 1,56 2,1 tj=150c 1,79 tj=25c 0,35 tj=150c tj=25c 650 tj=150c tj=25c 106 tj=150c 98 tj=25c 19 tj=150c 16 tj=25c 150 tj=150c 173 tj=25c 89 tj=150c 115 tj=25c 0,50 tj=150c 0,75 tj=25c 1,18 tj=150c 1,63 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,24 k/w tj=25c 1,2 1,63 2,1 tj=150c 1,60 tj=25c 28 tj=150c 79 tj=25c 144 tj=150c 147 tj=25c 1,91 tj=150c 4,71 di(rec)max tj=25c 1357 /dt tj=150c 4135 tj=25c 0,55 tj=150c 1,09 thermal resistance chip to heatsink per chip r thjh thermal grease thickness 50um = 1 w/mk 1,65 k/w na a/ s k mw %/k k? 4,7 210 3530 2,6 300 50 0 tj=25c 50 0 15 i rrm c rss v f t r erec q rr reverse recovery time reverse recovered energy peak rate of fall of recovery current reverse recovered charge t rr reverse transfer capacitance diode forward voltage gate charge inverter diode peak reverse recovery current q gate vcc=480 50 input capacitance v ce(sat) i ces v ge(th) e off t d(off) t d(on) collector-emitter cut-off current incl. diode turn-on delay time rise time gate-emitter leakage current collector-emitter saturation voltage output capacitance c oss r gint i ges t f e on c ies turn-off energy loss per pulse fall time turn-off delay time value characteristic values conditions 93 nc nc 15 f=1mhz rgon=8 ? 20 15 vce=vge 600 turn-on energy loss per pulse integrated gate resistor inverter transistor gate emitter threshold voltage rgoff=8 ? 15 50 50 0,0008 300 tj=25c tj=25c b-value b (25/100) tol. 3% deviation of r100 d r/r r100=435 ? power dissipation given epcos-typ p thermistor tol. 5% rated resistance r 25 25 0 rgon=8 ? tj=25c none 3140 200 310 pf mws v tc=100c tj=25c 4,94 4,46 ns mws a v ? v ns ma copyright by vincotech 3 revision: 2
v23990-p823-f10-pm preliminary datasheet figure 1 output inverter igbt figure 2 output inverter igbt typical output characteristics i c = f(v ce ) i c = f(v ce ) at at t p = 250 s t p = 250 s t j = 25 c t j = 150 c vge from 7 v to 17 v in steps of 1 v vge from 7 v to 17 v in steps of 1 v figure 3 output inverter igbt figure 4 output inverter fred typical transfer characteristics typical diode forward current as ic = f(v ge ) a function of forward voltage i f = f(v f ) at at t p = 250 s t p = 250 s v ce = 10 v output inverter typical output characteristics 0 30 60 90 120 150 012345 v ce (v) ic (a) 0 10 20 30 40 50 0246810 v ge (v) i c (a) tj = 25c tj = tj max -25c 0 30 60 90 120 150 00,511,522,53 v f (v) i f (a) tj = 25c tj = tj ma x -25c 0 30 60 90 120 150 012345 v ce (v) ic (a) c opyright by vincotech 4 revision: 2
v23990-p823-f10-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt typical switching energy losses typical switching energy losses as a function of collector current as a function of gate resistor e = f(i c ) e = f(r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 50 a r goff = 8 ? figure 7 output inverter igbt figure 8 output inverter igbt typical reverse recovery energy loss typical reverse recovery energy loss as a function of collector current as a function of gate resistor e rec = f(i c )e r e c = f ( r g ) with an inductive load at with an inductive load at t j = 25/150 c t j = 25/150 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 50 a output inverter e on e off e on: e off 0 0,5 1 1,5 2 2,5 3 0 20406080100 i c (a) e (mws) e off e on e on e off 0 0,5 1 1,5 2 2,5 3 0 8 16 24 32 40 r g ( ) e (mws) e rec e rec 0 0,5 1 1,5 2 0 20406080100 i c (a) e (mws) e rec e rec 0 0,3 0,6 0,9 1,2 1,5 0 8 16 24 32 40 r g ( ) e (mws) c opyright by vincotech 5 revision: 2
v23990-p823-f10-pm preliminary datasheet figure 9 output inverter igbt figure 10 output inverter igbt typical switching times as a typical switching times as a function of collector current function of gate resistor t = f(i c ) t = f(r g ) with an inductive load at with an inductive load at t j = 150 c t j = 150 c v ce = 300 v v ce = 300 v v ge = 15 v v ge = 15 v r gon = 8 ? i c = 50 a r goff = 8 ? figure 11 output inverter fred figure 12 output inverter fred typical reverse recovery time as a typical reverse recovery time as a function of collector current function of igbt turn on gate resistor t rr = f(ic) t rr = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 300 v v r = 300 v v ge = 15 v i f = 50 a r gon = 8 ? v ge = 15 v output inverter t doff t f t don t r 0,001 0,01 0,1 1 0 20406080100 ic (a) t ( s) t rr t rr 0 0,1 0,2 0,3 0,4 0 8 16 24 32 40 r gon ( ) t rr ( s) t doff t f t don t r 0,001 0,01 0,1 1 0 8 16 24 32 40 r g ( ) t ( s) t rr t rr 0 0,04 0,08 0,12 0,16 0,2 0 2 04 06 08 01 0 0 i c (a) t rr ( s) c opyright by vincotech 6 revision: 2
v23990-p823-f10-pm preliminary datasheet figure 13 output inverter fred figure 14 output inverter fred typical reverse recovery charge as a typical reverse recovery charge as a function of collector current function of igbt turn on gate resistor q rr = f(ic) q rr = f(r gon ) at at at t j = 25/150 c t j = 25/150 c v ce = 300 v v r = 300 v v ge = 15 v i f = 50 a r gon = 8 ? v ge = 15 v figure 15 output inverter fred figure 16 output inverter fred typical reverse recovery current as a typical reverse recovery current as a function of collector current function of igbt turn on gate resistor i rrm = f(ic) i rrm = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 300 v v r = 300 v v ge = 15 v i f = 50 a r gon = 8 ? v ge = 15 v output inverter i rrm i rrm 0 30 60 90 120 150 0 8 16 24 32 40 r gon ( ) irr m (a) q rr q rr 0 1 2 3 4 5 6 0 8 16 24 32 40 r gon ( ) q rr ( c) i rrm i rrm 0 20 40 60 80 100 120 0 20406080100 i c (a) irr m (a) q rr q rr 0 1 2 3 4 5 6 7 0 20406080100 i c (a) q rr ( c) c opyright by vincotech 7 revision: 2
v23990-p823-f10-pm preliminary datasheet figure 17 output inverter fred figure 18 output inverter fred typical rate of fall of forward typical rate of fall of forward and reverse recovery current as a and reverse recovery current as a function of collector current function of igbt turn on gate resistor di0/dt,direc/dt = f(ic) di0/dt,direc/dt = f(r gon ) at at t j = 25/150 c t j = 25/150 c v ce = 300 v v r = 300 v v ge = 15 v i f = 50 a r gon = 8 ? v ge = 15 v figure 19 output inverter igbt figure 20 output inverter fred igbt transient thermal impedance f red transient thermal impedance as a function of pulse width as a function of pulse width z thjh = f(tp) z thjh = f(tp) at at d = tp / t d = tp / t r thjh = 1,24 k/w r thjh = 1,65 k/w igbt thermal model values fred thermal model values r (c/w) tau (s) r (c/w) tau (s) 0,02 1,3e+01 0,02 1,5e+01 0,10 1,7e+00 0,09 1,7e+00 0,30 3,0e-01 0,27 3,1e-01 0,49 9,8e-02 0,72 8,9e-02 0,23 1,6e-02 0,36 1,4e-02 0,04 2,2e-03 0,09 1,3e-03 0,06 3,4e-04 0,10 2,4e-04 output inverter t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 t p (s) z thjh (k/w) 10 1 10 0 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 -5 d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0.000 di0/dt direc/dt 0 2000 4000 6000 8000 10000 12000 0 8 16 24 32 40 r gon ( ) di rec / dt (a/ s) di 0 /dt di rec /dt 0 1000 2000 3000 4000 5000 6000 0 20406080100 i c (a) di rec / dt (a/ s) c opyright by vincotech 8 revision: 2
v23990-p823-f10-pm preliminary datasheet figure 21 output inverter igbt figure 22 output inverter igbt power dissipation as a collector current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i c = f(t h ) at at t j = 175 c single heating t j = 175 c overall heating v ge =15 v figure 23 output inverter fred figure 24 output inverter fred power dissipation as a forward current as a function of heatsink temperature function of heatsink temperature p tot = f(t h )i f = f(t h ) at at t j = 175 c single heating t j = 175 c overall heating output inverter 0 30 60 90 120 150 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 th ( o c) i c (a) 0 20 40 60 80 100 120 0 50 100 150 200 th ( o c) p tot (w) 0 10 20 30 40 50 60 0 50 100 150 200 th ( o c) i f (a) c opyright by vincotech 9 revision: 2
v23990-p823-f10-pm preliminary datasheet figure 25 output inverter igbt figure 26 output inverter igbt safe operating area as a function gate voltage vs gate charge of collector-emitter voltage i c = f(v ce )v ge = f(qg) at at d = single pulse i c = 50 a th = 80 oc v ge = 15 v tj = t jmax oc output inverter v ce (v) i c (a) 10 3 10 0 10 -1 10 1 10 2 10 1 10 2 10u 10m 100m dc 10 0 10 3 1m 100u 0 5 10 15 20 0 100 200 300 400 qg (nc) v ge (v) 120v 480v copyright by vincotech 10 revision: 2
v23990-p823-f10-pm preliminary datasheet figure 1 thermistor typical ntc characteristic as a function of temperature r t = f(t) thermistor ntc-typical temperature characteristic 0 1000 2000 3000 4000 5000 25 50 75 100 125 t (c) r/ ? c opyright by vincotech 11 revision: 2
v23990-p823-f10-pm preliminary datasheet t j 150 c r g on 8 ? r goff 8 ? figure 1 output inverter igbt figure 2 output inverter igbt turn-off switching waveforms & definition of tdoff, teoff turn-on switching waveforms & definition of tdon, teon (t eof f = integrating time for e of f )( t eon = integrating time for e on ) v ge (0%) = -15 v v ge (0%) = -15 v v ge (100%) = 15 v v ge (100%) = 15 v v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 50 a i c (100%) = 50 a t doff = 0,17 s t don = 0,10 s t eoff = 0,58 s t eon = 0,22 s figure 3 output inverter igbt figure 4 output inverter igbt turn-off switching waveforms & definition of t f turn-on switching waveforms & definition of t r v c (100%) = 300 v v c (100%) = 300 v i c (100%) = 50 a i c (100%) = 50 a t f = 0,12 s t r = 0,02 s switching definitions output inverter general conditions = = = i c 1% u ce 90% u ge 90% -40 -20 0 20 40 60 80 100 120 140 -0,2 0 0,2 0,4 0,6 0,8 time (us) % t doff t eoff uce ic u ge ic 10% uge 10% t don u ce3% -40 0 40 80 120 160 200 240 280 2,8 2,95 3,1 3,25 3,4 3,55 time(us) % ic uce t eon uge fitted i c10% i c 90% i c 60% i c 40% -20 0 20 40 60 80 100 120 140 0,05 0,1 0,15 0,2 0,25 0,3 0,35 0,4 time (us) % uce ic t f i c10% ic90% -20 20 60 100 140 180 220 260 2,9 3 3,1 3,2 3,3 3,4 time(us) % tr uce ic c opyright by vincotech 12 revision: 2
v23990-p823-f10-pm preliminary datasheet figure 5 output inverter igbt figure 6 output inverter igbt turn-off switching waveforms & definition of t eof f turn-on switching waveforms & definition of t eon p off (100%) = 15,03 kw p on (100%) = 15,03 kw e off (100%) = 1,63 mj e on (100%) = 0,75 mj t eoff = 0,58 s t eon = 0,22 s figure 7 output inverter fred figure 8 output inverter igbt gate voltage vs gate charge (measured) turn-off switching waveforms & definition of t r r v geoff = -15 v v d (100%) = 300 v v geon = 15 v i d (100%) = 50 a v c (100%) = 300 v i rrm (100%) = -79 a i c (100%) = 50 a t rr = 0,15 s q g = 479,76 nc switching definitions output inverter ic 1% uge90% -20 0 20 40 60 80 100 120 -0,2 0 0,2 0,4 0,6 0,8 time (us) % poff eoff teoff u ce3% u ge10% -20 10 40 70 100 130 160 2,95 3,03 3,11 3,19 3,27 3,35 time(us) % p on e on t eon -20 -15 -10 -5 0 5 10 15 20 -250 -100 50 200 350 500 650 qg (nc) uge (v) i rrm 10% i rrm 90% i rrm 100% trr -200 -160 -120 -80 -40 0 40 80 120 3 3,08 3,16 3,24 3,32 3,4 time(us) % id ud fitted c opyright by vincotech 13 revision: 2
v23990-p823-f10-pm preliminary datasheet figure 9 output inverter fred figure 10 output inverter fred turn-on switching waveforms & definition of t qr r turn-on switching waveforms & definition of t erec (t qrr = integrating time for q r r )( t erec = integrating time for e rec ) i d (100%) = 50 a p rec (100%) = 15,03 kw q rr (100%) = 4,71 c e rec (100%) = 1,09 mj t qint = 0,80 s t erec = 0,80 s switching definitions output inverter tqint -200 -150 -100 -50 0 50 100 150 2,9 3,15 3,4 3,65 3,9 4,15 time(us) % id q rr -20 0 20 40 60 80 100 120 2,9 3,15 3,4 3,65 3,9 4,15 time(us) % p rec erec te rec c opyright by vincotech 14 revision: 2
v23990-p823-f10-pm preliminary datasheet outline pinout package outline and pinout c opyright by vincotech 15 revision: 2
v23990-p823-f10-pm preliminary datasheet product status definitions formative or in design first production full production disclaimer life support policy as used herein: the information given in this datasheet describes the type of component and does not represent assured characteristics. for tes ted values please contact vincotech.vincotech reserves the right to make changes without further notice to any products herein to i mprove reliability, function or design. vincotech does not assume any liability arising out of the application or use of any product o r circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. vincotech products are not authorised for use as critical components in life support devices or systems without the express wri tten approval of vincotech. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. target product status datasheet status definition this datasheet contains the design specifications for product development. specific ations may change in any manner without notice. the dat a contained is exclusively intended for technica lly trai ned staff. preliminary this datasheet contains preliminary data, and supplementary data may be published at a later date. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for technically trained staff. final this datasheet contains final specifications. vincotech reserves the right to make changes at any time without notice in order to improve design. the data contained is exclusively intended for te chnically tr ained st aff. c opyright by vincotech 16 revision: 2

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